ETRI Journal, vol. 36, no. 3, June 2014
The figure shows a microphotograph of the C-band MMIC high power amplifier fabricated using a commercial 0.25 µm AlGaN/GaN technology. The chip provides a saturated output power of 50 W with higher than 35% power-added efficiency over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm² (3.8 mm x 3.9 mm) chip area, an output power density of 3.2 W/mm² is demonstrated. See page 488.