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Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials |
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Hojun Ryu, Sein Kwon, Sanghoon Cheon, Seong Mok Cho, Woo Seok Yang, and Chang Auck Choi |
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| Abstract : | Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film. |
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| Key word : | Microbolometer, silicon antimony, resistor, noise. |
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| DOI : | http://dx.doi.org/10.4218/etrij.09.1209.0014 |
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| Cite this : | Hojun Ryu, Sein Kwon, Sanghoon Cheon, Seong Mok Cho, Woo Seok Yang, and Chang Auck Choi, "Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials," ETRI Journal, vol. 31, no. 6, Dec. 2009,
pp. 703-708. | ||||||||||
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