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Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jae-Heon Shin, Ji-Su Lee, Chi-Sun Hwang, Sang-Hee Ko Park, Woo-Seok Cheong, Minki Ryu, Chun-Won Byun, Jeong-Ik Lee, and Hye Yong Chu
Abstract :	We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.
Key word :	ZnO, transparent oxide semiconductor, thin film transistor (TFT), bias stability, light effect.
DOI :	http://dx.doi.org/10.4218/etrij.09.0208.0266
Cite this :	Jae-Heon Shin, Ji-Su Lee, Chi-Sun Hwang, Sang-Hee Ko Park, Woo-Seok Cheong, Minki Ryu, Chun-Won Byun, Jeong-Ik Lee, and Hye Yong Chu, "Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors," ETRI Journal, vol. 31, no. 1, Feb. 2009, pp. 62-64. http://dx.doi.org/10.4218/etrij.09.0208.0266
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