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Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

Young-Min Kim , Ho-Cheol Yoon , and Jong-Hyun Lee

Abstract :

We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of 5 m, a width of 50 m, and a length of 800 m. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was 170 m, and an annealing process was performed for 20 min at 500C. The contact resistance of the newly fabricated probe card was less than 2 , and its lifetime was more than 20,000 turns.

Key word :

Silicon probe card, probe beam, porous silicon micromachining, contact resistance.

DOI :

http://dx.doi.org/10.4218/etrij.05.0104.0080

Cite this :

Young-Min Kim, Ho-Cheol Yoon, and Jong-Hyun Lee, "Silicon Micro-probe Card Using Porous Silicon Micromachining Technology," ETRI Journal, vol. 27, no. 4, Aug. 2005, pp. 433-438.
http://dx.doi.org/10.4218/etrij.05.0104.0080

References :

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12. Y.M. Kim, K.Y. Noh, J.Y. Park, Y.D. Kim, I.S. Yu, C.S. Cho, and J.H. Lee, "Fabrication of Oxidized Porous Silicon(OPS) Air-Brdige for RF Application Using Micromachining Technology," J. the Korean Physical Socity, 2001, pp. S268-S270.
13. J.Y. Park and J.H. Lee, "Characterization of Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application," ETRI J., vol. 26, no. 4, Aug. 2004, pp. 315-320.

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