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Silicon Micro-probe Card Using Porous Silicon Micromachining Technology
Young-Min Kim , Ho-Cheol Yoon , and Jong-Hyun Lee
Abstract :	We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of 5 m, a width of 50 m, and a length of 800 m. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was 170 m, and an annealing process was performed for 20 min at 500C. The contact resistance of the newly fabricated probe card was less than 2 , and its lifetime was more than 20,000 turns.
Key word :	Silicon probe card, probe beam, porous silicon micromachining, contact resistance.
DOI :	http://dx.doi.org/10.4218/etrij.05.0104.0080
Cite this :	Young-Min Kim, Ho-Cheol Yoon, and Jong-Hyun Lee, "Silicon Micro-probe Card Using Porous Silicon Micromachining Technology," ETRI Journal, vol. 27, no. 4, Aug. 2005, pp. 433-438. http://dx.doi.org/10.4218/etrij.05.0104.0080
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