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| Silicon Micro-probe Card Using Porous Silicon Micromachining Technology Young-Min Kim, Ho-Cheol Yoon, and Jong-Hyun Lee, ETRI Journal, vol.27, no.4, Aug. 2005, pp.433-438. | |
| Abstract : | We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of 5 m, a width of 50 m, and a length of 800 m. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was 170 m, and an annealing process was performed for 20 min at 500C. The contact resistance of the newly fabricated probe card was less than 2 , and its lifetime was more than 20,000 turns. |
| Key word : | Silicon probe card, probe beam, porous silicon micromachining, contact resistance. |
| DOI : | 10.4218/etrij.05.0104.0080 |
| Cite this : | Young-Min Kim, Ho-Cheol Yoon, and Jong-Hyun Lee, "Silicon Micro-probe Card Using Porous Silicon Micromachining Technology," ETRI Journal, vol.27, no.4, Aug. 2005, pp.433-438. DOI:10.4218/etrij.05.0104.0080 |
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| ETRI Journal Vol.27, No.4 |
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Silicon Micro-probe Card Using Porous Silicon Micromachining Technology |
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Young-Min Kim, Ho-Cheol Yoon, and Jong-Hyun Lee, ETRI Journal, vol.27, no.4, Aug. 2005, pp.433-438. DOI:10.4218/etrij.05.0104.0080 |
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