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A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
Won-So Son, Sang-Gi Kim, Young-Ho Sohn, and Sie-Young Choi
Abstract :	To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-oninsulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific onresistance. The breakdown voltage and the specific onresistance of the fabricated device is 352 V and 18.8 mΩ·cm2 with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at Vgs=5 V and Vds=20 V is 16 mA with a gate width of 150 µm.
Key word :	lateral double-diffused MOSFET (LDMOSFET), trench, silicon-on-insulator (SOI), power integrated circuit (PIC).
DOI :	http://dx.doi.org/10.4218/etrij.04.0103.0104
Cite this :	Won-So Son, Sang-Gi Kim, Young-Ho Sohn, and Sie-Young Choi, "A New Structure of SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC," ETRI Journal, vol. 26, no. 1, Feb. 2004, pp. 7-12. http://dx.doi.org/10.4218/etrij.04.0103.0104
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